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1. Field of the Invention
The present invention relates to a liquid crystal display (LCD) device, and more particularly, to a method for fabricating a thin film transistor array substrate having an improved storage capacitor.
2. Discussion of the Related Art
Liquid crystal display devices are used in displays of television receivers, and include an upper substrate, a lower substrate, and a liquid crystal layer disposed between the upper and lower substrates.
Methods for forming a thin film transistor array substrate include a five mask process, which includes a thin film deposition process, a photolithography process, and an etching process using a mask. The five mask process includes five photolithography processes and a photolithography process using four masks.
In the five mask process, a gate line and a gate electrode connected to the gate line are formed on a substrate. After this, a gate insulating layer is formed on the entire surface of the substrate including the gate line and the gate electrode. Then, a semiconductor layer is formed on the gate insulating layer over the gate electrode. Then, source and drain electrodes are formed on the semiconductor layer by a photolithography process using a first mask. In the photolithography process, a material such as chromium (Cr) is used as the source and drain electrodes.
Subsequently, a passivation layer is formed on the entire surface of the substrate including the source and drain electrodes. Then, a first contact hole is formed by etching the passivation layer to expose a portion of the source electrode. A pixel electrode is formed on the passivation layer and contacts the drain electrode through the first contact hole. Then, a black matrix is formed on the upper substrate by coating a black resin.
A second mask is used for a photolithography process to form a color filter layer, a common electrode, and a second contact hole. After this, a second passivation layer is formed on the entire surface of the substrate including the black matrix. In the second passivation layer, the second contact hole exposes a portion of the drain electrode, and the common electrode is formed on the second passivation layer through the second contact hole.
Although not shown in the drawings, a third mask is used to form a drain contact hole and a storage capacitor connected to a storage electrode. Then, a third passivation layer is formed on the entire surface of the substrate including the drain contact hole. A pixel electrode is formed on the third passivation layer
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